发明名称 |
Continuous plane of thin-film materials for a two-terminal cross-point memory |
摘要 |
A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.
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申请公布号 |
US2011155990(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20110932642 |
申请日期 |
2011.03.01 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
CHEUNG ROBIN;RINERSON DARRELL;OH TRAVIS BYONGHYOP;BORNSTEIN JON;HANSEN DAVID |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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