| 摘要 |
<p>PURPOSE: An organic thin film transistor and a fabricating method of the same are provided to protect an organic layer from moisture and oxygen by forming a first protective film of an organic material and a second protective film of inorganic material. CONSTITUTION: A source electrode(S) and a drain electrode(D) are formed on a substrate(SUB) and are separated from each other by a certain interval. An organic semiconductor layer(OSC) is interposed between the source electrode and the drain electrode. An organic gate insulating film(OGI) is formed on the organic semiconductor layer. A gate electrode(G) is formed on the organic gate insulating film. A first protective film(PASI1) covers the source electrode, the drain electrode, and the gate electrode. A second protective film(PASI2) is formed on the first protective film.</p> |
