| 摘要 |
PURPOSE: A semiconductor apparatus capable of reducing plasma damage is provided to prevent the inflow of plasma ions remaining in a process by installing a current circulation part in the device. CONSTITUTION: A PMOS area(210) comprises an active area(215) including a p-type impurity, a gate electrode(220), and junction areas(230a,230b). An NMOS area(250) comprises an active area(255) including an n-type impurity, a gate electrode(260), and junction areas(270a,270b). Guard ring regions(310,320) are formed at a region where the PMOS area and NMOS area are faced with each other. A current circuitous part is formed within the guard ring region and discharges the current generated from a plasma ion to a semiconductor substrate.
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