| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To supply a reference voltage to a photoelectric conversion part without increasing an FD capacitance value in a solid-state imaging device where the photoelectric conversion part and a peripheral circuit part are divided into different boards. <P>SOLUTION: The solid-state imaging device includes: a pixel region arranged with a photoelectric conversion part, an FD and a transfer transistor; a reset transistor; an amplifier transistor; and a reference voltage supply line for supplying a reference voltage to the photoelectric conversion part, wherein the pixel region and the reference voltage supply line are arranged on a first semiconductor substrate, and at least either of the reset transistor and the amplifier transistor is arranged on a second semiconductor substrate. In the solid-state imaging device, a power line for supplying a voltage to the reference voltage supply line is arranged on the second semiconductor substrate; a first electrical connection part for connecting the FD to the reset transistor, and a second electrical connection part for electrically connecting the reference voltage supply line to the power line are included; the first electrical connection part is arranged in the pixel region; and the second electrical connection part is arranged outside the pixel region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
