SYNTHETIC CVD DIAMOND

摘要

A chemical vapour deposition (CVD) method for synthesizing diamond material on a substrate in a synthesis environment, said method comprising: providing the substrate; providing a source gas; dissociating the source gas; and allowing homoepitaxial diamond synthesis on the substrate; wherein the synthesis environment comprises nitrogen at an atomic concentration of from about 0.4 ppm to about 50 ppm; and and wherein the source gas comprises: a) an atomic fraction of hydrogen, Hf, from about 0.40 to about 0.75; b) an atomic fraction of carbon, Cf, from about 0.15 to about 0.30; c) an atomic fraction of oxygen, Of, from about 0.13 to about 0.40; wherein Hf + Cf + Of = 1; wherein the ratio of atomic fraction of carbon to the atomic fraction of oxygen, Cf:Of, satisfies the ratio of about 0.45: 1 f:Of 2, at an atomic fraction of the total number of hydrogen, oxygen and carbon atoms present of between 0.05 and 0.40; and wherein the atomic fractions Hf, Cf and Of are fractions of the total number of hydrogen, oxygen and carbon atoms present in the source gas.