| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial growth device having a structure capable of suppressing deterioration of an epitaxial thin film by re-evaporation of decomposition extraneous matter by suppressing adhesion of foreign matter onto a substrate by allowing the structure to prevent generation of the decomposition extraneous matter in a reactor, and reducing the number of times of maintenance for removing the decomposition extraneous matter in the reactor. SOLUTION: In this compound semiconductor epitaxial growth device 10 for supplying a raw material containing a group V element into a reactor 11 with a substrate 13 stored therein to subject the raw material to vapor-phase epitaxial growth on the substrate 13, the raw material containing the group V element is decomposed, and a hydrogen radical supply means 36 for running gas excessively containing a hydrogen radical is connected to the upstream side of an adhesion part 17 to which the decomposed deposits adhere in the reactor 11. COPYRIGHT: (C)2011,JPO&INPIT
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