CELL STRUCTURE OF FLOATING-BODY DRAM AND THE MANUFACTURING METHOD THEREOF

摘要

A cell structure of floating-body DRAM and the manufacturing method thereof are provided. The structure includes a P-type semiconductor region on a buried oxide layer (100), an N-type semiconductor region (203) on the P-type semiconductor region, a gate region (402) on the N-type semiconductor region (203), and an electrical insulation region (300) surrounding the N-type semiconductor region (203) and the P-type semiconductor region. The insulated floating-body gate diode is used as a storage node. The electrons accumulate in the floating-body by tunneling from band to band, which is defined as a first storage state; and the electrons emit from the floating-body or holes inject to the floating-body when the PN junction is under forward bias, which is defined as a second storage state. The difference of the forward threshold voltages of the floating-body gate diode (N+/P+) under the two states can be detected by the value of current. The cell structure of floating-body DRAM is a gate diode (N+/P+) with high efficiency, low power consumption and high density, and has the advantages of simple manufacture process, high integration density, low cost and high reliability.