| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which uses an oxide semiconductor having stable electric characteristics. <P>SOLUTION: An I type oxide semiconductor layer having a high impurity is formed by heating an oxide semiconductor layer in an inert gas atmosphere of nitrogen or noble gas (such as argon or helium) or at vacuum pressure for dehydration or dehydrogenation and by performing a cooling step of peroxidizing the layer at an atmosphere of oxygen, oxygen and nitrogen, or in an atmospheric environment (preferably, dew point temperature of -40°C or below and more preferably -50°C or below). The semiconductor device having a thin-film transistor including the oxide semiconductor layer is manufactured. <P>COPYRIGHT: (C)2011,JPO&INPIT |
