| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-flatness semiconductor wafer manufacturing method that lowers costs by reducing a machining allowance margin and increasing the number of wafers manufactured from each ingot, and reduces metal contamination. SOLUTION: A semiconductor wafer having been lapped is plane-ground, so a damaged layer becomes thin and margins of following etching and polishing decrease. Therefore, all machining allowance costs per ingot are reduced and the number of wafers per ingot increases to achieve cost reduction. Further, the damaged layer is reduced even when an alkaline etchant of≤20 wt.% in concentration is used to eliminate an increase in depth of an etch pit and a decrease in flatness. The etchant contains a chelating agent, so Ni and Cu in the etchant are removed to prevent metal contamination of wafers. COPYRIGHT: (C)2011,JPO&INPIT |
