发明名称 MEMORY DEVICE FOR REDUCING PROGRAMMING TIME
摘要 A non-volatile memory device includes: first and second planes each comprising a plurality of non-volatile memory cells; first and second buffer corresponding to the first and second planes, respectively; an input/output control unit configured to selectively control input/output paths of data stored in the first and second page buffers; a flash interface connected to the input/output control unit; and a host connected to the flash interface.
申请公布号 US2011161567(A1) 申请公布日期 2011.06.30
申请号 US20100839364 申请日期 2010.07.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SONG SANG HYUN
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
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