发明名称 |
METHOD TO FORM SEMICONDUCTOR LASER DIODE |
摘要 |
The process of the present invention to form a mask made of inorganic material containing silicon reduces the plasma damage induced in the semiconductor layers due to the plasma-ashing. The semiconductor material is heat-treated at a high temperature after the growth thereof to form an oxide layer positively in the surface of the semiconductor material before it is covered by the silicon inorganic film. This inorganic film is dry-etched by an etchant containing fluorine to get a mask for forming a mesa and for growing burying layer selectively.
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申请公布号 |
US2011159620(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20100971689 |
申请日期 |
2010.12.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KATSUYAMA TOMOKAZU |
分类号 |
H01L33/22;H01L21/20;H01L33/30 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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