| 摘要 |
Disclosed is a method for forming a crystalline cobalt silicide film, which is characterized in that a coating film is formed on a surface that is composed of silicon by applying a composition that is obtained by mixing a zero-valent cobalt complex and a compound represented by formula (1A) or (1B) or a polymer thereof, and the coating film is heated at 550-900°C, thereby forming a two-layer film that is composed of a first layer and a second layer, and the second layer of the two-layer film is then removed therefrom. The first layer is composed of crystalline cobalt silicide and formed on the surface that is composed of silicon, while the second layer is formed on the first layer and contains silicon atoms, oxygen atoms, carbon atoms and cobalt atoms. SinX2n+2 (1A) SimX2m (1B) (In formulae (1A) and (1B), Xs each represents a hydrogen atom or a halogen atom; n represents an integer of 1-10; and m represents an integer of 3-10.) |
