发明名称 APPARATUS FOR GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal, which prevents cracks from being caused in a crystal in the process of producing a single crystal to be used as a substrate for an optical device or the like. SOLUTION: A single crystal free of cracks can be obtained with high reproducibility regardless of a large difference in thermal expansion between a platinum crucible and an LN (lithium niobate) single crystal in the process of growing an LN single crystal by VB (vertical Bridgeman) method, by employing a crucible structure of the present invention having a foil type platinum plate inserted inside the platinum crucible for growing a crystal. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011126719(A) 申请公布日期 2011.06.30
申请号 JP20090283531 申请日期 2009.12.15
申请人 FUJI ELECTRIC CO LTD 发明人 KUNIHARA KENJI;HIROSE TAKAYUKI;DAITO MASATAKA;YONEZAWA YOSHIYUKI
分类号 C30B11/00;G02F1/355 主分类号 C30B11/00
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