| 摘要 |
<p>PURPOSE: A semiconductor device is provided to have a profit in forming a LDD(Lightly Doped Drain) by patterning a gate after forming a storage electrode contact. CONSTITUTION: In a semiconductor device is provided to have a profit in forming a LDD(Lightly Doped Drain), A gate poly(106) is formed on a semiconductor substrate(100) including an active area(104) defined as an element isolation film(102). The semiconductor substrate is etched to form a trench for a buried gate. A gate electrode layer(112) and a sealing insulating layer(114) are formed so that the trench for the buried gate is buried. An insulating layer(116) for the bit line contact is formed over a hard mask layer. The insulating layer for the bit line contact is etched for a bit line contact hole.</p> |
