| 摘要 |
PURPOSE: A light emitting device, a light emitting device package, and a light emitting device manufacturing method are provided to improve the light emitting efficiency of the light emitting device by forming a barrier layer and a quantum well layer. CONSTITUTION: An active layer(140) includes at least one barrier layer and a quantum well layer stacked on a conductive semiconductor layer. A second conductive semiconductor layer(150) is formed on the active layer. A quantum well layer includes a plurality of sub barrier layers and a plurality of sub quantum well layers. The band gap of the sub quantum well layers is lower than that of the sub barrier layer. |
