PERPENDICULAR MAGNETIC TUNNEL JUNCTION, MAGNETIC DEVICE COMPRISING THE SAME AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A perpendicular magnetic tunnel junction, a magnetic device comprising the same and a method of manufacturing the same are provided to make the spin torque switching of a MTJ fast reducing a switching time. CONSTITUTION: In a perpendicular magnetic tunnel junction, a magnetic device comprising the same and a method of manufacturing the same, a tunneling layer(34) is formed on a lower magnetic layer(L1). An upper magnetic layer(U1) is formed on the tunneling layer. The magnetization direction of one of the upper and lower magnetic layers is changed by a spin polarization current One magnetic layer comprises a free layer(40) indicates a vertical magnetic anisotropy A polarization reinforcement layer and an interface barrier layer are laminated between the tunneling layer and the free layer.