METHODS FOR MAKING OXIDE THIN LAYER TRANSISTOR USING REACTIVE SPUTTERING METHOD

摘要

PURPOSE: A method for manufacturing an oxide thin film transistor using a reactive sputtering method is provided to form an insulation layer by a reactive sputtering method, thereby reducing physical damage to a substrate. CONSTITUTION: Source and drain electrodes, a channel layer(30), a gate insulation layer(40), and a gate electrode(50) are formed on a substrate. The substrate includes a flexible substrate. An insulation layer is patterned. The temperature of the substrate is maintained up to 300°C at room temperature when the substrate is deposited during the process of forming the insulation layer.