发明名称 |
Flash memory device with multi-level cells and method of writing data therein |
摘要 |
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
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申请公布号 |
US7970981(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20070702573 |
申请日期 |
2007.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHEON WON-MOON;KIM SEON-TAEK;PARK CHAN-IK;CHOI SUNG-UP |
分类号 |
G06F12/06;G11C11/34;G11C16/04;G11C16/06 |
主分类号 |
G06F12/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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