发明名称 Compound semiconductor device and method for manufacturing same
摘要 A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
申请公布号 US7968430(B2) 申请公布日期 2011.06.28
申请号 US20070850377 申请日期 2007.09.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUYAMA TAKAYUKI;HOSOKAWA TADAAKI;IIDA SEIJI;TANAKA AKIRA
分类号 H01L21/00;H01L33/32;H01L33/46 主分类号 H01L21/00
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