Transistor with reduced short channel effects and method

摘要

A method of fabricating a transistor (10) comprises forming source and drain regions (46) and (47) using a first sidewall (42) and (43) as a mask and forming a deep blanket source and drain regions (54) and (56) using a second sidewall (50) and (51) as a mask, the second sidewall (50) and (51) comprising at least part of the first sidewall (42) and (43).