发明名称 |
Silicon carbide semiconductor device |
摘要 |
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
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申请公布号 |
US7968892(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20070882137 |
申请日期 |
2007.07.31 |
申请人 |
DENSO CORPORATION |
发明人 |
KOJIMA JUN;ENDO TAKESHI;OKUNO EIICHI;MITSUOKA YOSHIHITO;HISADA YOSHIYUKI;MATSUKI HIDEO |
分类号 |
H01L31/0256;H01L21/04;H01L21/336;H01L29/04;H01L29/15;H01L29/24;H01L29/51;H01L29/78 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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