发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Multi-gate metal oxide silicon transistors and methods of making multi-gate metal oxide silicon transistors are provided. The multi-gate metal oxide silicon transistor contains a bulk silicon substrate containing one or more convex portions between shallow trench regions; one or more dielectric portions over the convex portions; one or more silicon fins over the dielectric portions; a shallow trench isolation layer in the shallow trench isolation regions; and a gate electrode. The upper surface of the shallow trench isolation layer can be located below the upper surface of the convex portion, or the upper surface of the shallow trench isolation layer can be located between the lower surface and the upper surface of first dielectric layer. The multi-gate metal oxide silicon transistor can contain second spacers adjacent to side surfaces of the convex portions in a source/drain region.
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申请公布号 |
US2011147839(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090640658 |
申请日期 |
2009.12.17 |
申请人 |
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. |
发明人 |
YAGISHITA ATSUSHI;FUJIWARA MAKOTO;KAWASAKI HIROHISA;TAKAYANAGI MARIKO |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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