发明名称 POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER COMPOUND AND COMPOUND
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition having superior lithographic characteristics and suppressing film reduction during pattern formation, a polymer compound useful as a base component of the positive resist composition, a compound which is useful as a monomer, as well as, a method for forming a pattern. <P>SOLUTION: The positive resist composition contains a base component (A), of which the solubility in an alkali developing solution is increased by the action of an acid and an acid generator component (B) generating an acid by exposure, wherein the base component (A) contains a polymer compound (A1), having a structural unit which is an acrylic compound having a dissociable group that includes a naphthalene ring. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011123463(A) 申请公布日期 2011.06.23
申请号 JP20100072622 申请日期 2010.03.26
申请人 TOKYO OHKA KOGYO CO LTD 发明人 IWASHITA ATSUSHI;YOSHIZAWA SACHIKO;KONNO TAKEMICHI
分类号 G03F7/039;C08F20/10;G03F7/004;H01L21/027 主分类号 G03F7/039
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