发明名称 |
METHOD OF FABRICATING STRAINED STRUCTURE IN SEMICONDUCTOR DEVICE |
摘要 |
The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a portion of the substrate, and strained structures disposed at either side of the portion of the substrate and formed of a semiconductor material different from the semiconductor substrate. The portion of the substrate is T shaped having a horizontal region and a vertical region that extends from the horizontal region in a direction away from a surface of the substrate.
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申请公布号 |
US2011147810(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090645834 |
申请日期 |
2009.12.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU YU-RUNG;YU CHEN-HUA;CHEN CHAO-CHENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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