| 摘要 |
<p>A field effect transistor structure comprises a first layer (11) of undoped silicon carbide on or above the 4H-SiC substrate (10), a second layer (11a-b) of silicon carbide on or above the first layer of silicon carbide, wherein the second layer of silicon carbide has different conductivity than the first layer of silicon carbide, and a third layer (12, 13) of different material type than the first two layers of silicon carbide, preferably graphene, grown over the second layer of silicon carbide. The second layer of silicon carbide is further divided into two portions (11a-b) of different conductivities, which are separated by insulating dielectric material (14); and the third layer is further divided into two portions (12, 13) of different conductivities, which are separated by the insulating dielectric material which is in direct contact with the third and the second layer</p> |
