SEMICONDUCTOR DEVICE MODULE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE MODULE, SEMICONDUCTOR DEVICE MODULE MANUFACTURING DEVICE

摘要

A semiconductor device module is provided, including a number of n semiconductor devices formed on a substrate (10), n being an integer = 2; each semiconductor device having a stack of a first contact layer region (12; 22), a semiconductor layer region (30), and a second contact layer region (40); wherein the first contact layer region of each (n-1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection (46); and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection.