发明名称 |
CLUSTER JET PROCESSING METHOD, SEMICONDUCTOR ELEMENT, MICROELECTROMECHANICAL ELEMENT, AND OPTICAL COMPONENT |
摘要 |
A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.
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申请公布号 |
US2011147896(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US200913059340 |
申请日期 |
2009.08.10 |
申请人 |
IWATANI CORPORATION;KYOTO UNIVERSITY |
发明人 |
KOIKE KUNIHIKO;SENOO TAKEHIKO;YOSHINO YU;AZUMA SHUHEI;MATSUO JIRO;SEKI TOSHIO;NINOMIYA SATOSHI |
分类号 |
H01L29/06;B29D11/00;C23F1/00;C23F1/04;H01L21/465;H01L21/467;H05K3/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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