| 摘要 |
<p>PURPOSE: A cell structure of a charge trap type memory is provided to increase a charge storage property by using gallium arsenide as a charge trap layer. CONSTITUTION: A gate structure(10a) includes a gallium arsenide layer(15) arranged as a charge trap site. The gallium arsenide layer is formed by an atomic layer deposition method, a chemical vapor deposition method, or a molecular beam epitaxy method. A gate structure includes a transmission insulation layer(14), a blocking insulation layer(16), and a gate electrode(17). The gate structure is comprised of a planar gate structure or pin-pet type gate structure. A first impurity region(12) and a second impurity region(13) are formed on a substrate(11) to contact with the transmission insulation layer.</p> |
