发明名称 APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD USING THE SAME
摘要 PURPOSE: An apparatus for metal organic chemical vapor deposition and a method using the same are provided to reduce a process time by performing a next process in another chamber while cleaning a chamber. CONSTITUTION: In an apparatus for metal organic chemical vapor deposition and a method using the same, a first reaction chamber(110) and a second reaction chamber are combined in a buffer chamber(200). A heater is included in a first reaction chamber, a second reaction chamber, and buffer chamber. The gas feed assembly(400) supplies the process gas to the first reaction chamber, and the second reaction chamber or the buffer chamber. A transfer device unloads a substrate from a first reaction chamber and loads the substrate to a second reaction chamber. The process gas comprises a III group gas and a V group group gas.
申请公布号 KR20110067900(A) 申请公布日期 2011.06.22
申请号 KR20090124678 申请日期 2009.12.15
申请人 LIGADP CO., LTD. 发明人 JIN, JOO;JEONG, JIN YEOL;HONG, SUNG JAE;HAN, SEOK MAN
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址