发明名称 |
APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD USING THE SAME |
摘要 |
PURPOSE: An apparatus for metal organic chemical vapor deposition and a method using the same are provided to reduce a process time by performing a next process in another chamber while cleaning a chamber. CONSTITUTION: In an apparatus for metal organic chemical vapor deposition and a method using the same, a first reaction chamber(110) and a second reaction chamber are combined in a buffer chamber(200). A heater is included in a first reaction chamber, a second reaction chamber, and buffer chamber. The gas feed assembly(400) supplies the process gas to the first reaction chamber, and the second reaction chamber or the buffer chamber. A transfer device unloads a substrate from a first reaction chamber and loads the substrate to a second reaction chamber. The process gas comprises a III group gas and a V group group gas.
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申请公布号 |
KR20110067900(A) |
申请公布日期 |
2011.06.22 |
申请号 |
KR20090124678 |
申请日期 |
2009.12.15 |
申请人 |
LIGADP CO., LTD. |
发明人 |
JIN, JOO;JEONG, JIN YEOL;HONG, SUNG JAE;HAN, SEOK MAN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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