发明名称 TEMPERATURE CONTROL METHOD FOR CHEMICAL VAPOR DEPOSITION DEVICE
摘要 PURPOSE: A temperature control method for a chemical vapor deposition device is provided to precisely the temperature inside a chamber by accurately measuring the temperature distribution of a susceptor. CONSTITUTION: A susceptor(40) has a wafer on top. A heater is arranged inside of the susceptor and heats the wafer. A temperature sensor is arranged inside the chamber and measures the temperature of the susceptor. A rotation indication is arranged with the susceptor at a rotary part. A rotation detection sensor determines the rotation state of the susceptor through the rotation indication. An ID is assigned at a certain temperature period of the susceptor which is calculated by the rotation sensor and temperature sensor. A heater is controlled by comparing a user set temperature period with a reference temperature.
申请公布号 KR20110068374(A) 申请公布日期 2011.06.22
申请号 KR20090125296 申请日期 2009.12.16
申请人 LIGADP CO., LTD. 发明人 HONG, SUNG JAE;LEE, HONG WON;HAN, SEOK MAN;JIN, JOO
分类号 H01L21/205;H01L21/683 主分类号 H01L21/205
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