| 摘要 |
A semiconductor device is disclosed that comprises: an insulation substrate (13), a first metal plate (14), a semiconductor element (12), a second metal plate (15) and a heat sink (16) for cooling the semiconductor element (12). The heat sink (16) includes a case portion (17), and a plurality of partitioning walls (18) is located in the case portion (17). The case portion (17) has a surface that faces the second metal plate (15), which the surface includes a joint region (S), to which the second metal plate (15) is joined, and a non-joint region (P), to which the second metal plate (15) is not joined. The partitioning walls (18) include first partitioning walls (18A) and second partitioning walls (18B). Among the first and second partitioning walls (18A, 18B), only one or more of the second partitioning walls (18B) pass through a region in the case portion (17) that corresponds to the non-joint region (P). |
