METHOD FOR FABRICATING VERTICAL CHANNEL TRANSISTOR

摘要

PURPOSE: A method for manufacturing a vertical channel transistor is provided to increase current driving performance. CONSTITUTION: A first trench is expanded on a substrate in a first horizontal direction. An active bar is expanded in a first horizontal direction by a first insulating film. A line type active pattern is expanded on a substrate in the first horizontal direction. A buried bit line(160) is expanded on the substrate in the first horizontal direction. A word line(190) is expanded in a second horizontal direction along with at least one side of a vertical channel.