| 发明名称 |
Non-polar (Al,B,In,Ga)N-based device with a reduced dislocation density and method for its manufacture |
| 摘要 |
<p>A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (1120) a-plane GaN layers are grown on an r-plane (1102) sapphire substrate using MOCVD. These non-polar (1120) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.</p> |
| 申请公布号 |
EP2336397(A2) |
申请公布日期 |
2011.06.22 |
| 申请号 |
EP20110157532 |
申请日期 |
2003.04.15 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CRAVEN, MICHAEL D.;DENBAARS, STEVEN P.;SPECK, JAMES S. |
| 分类号 |
C30B25/02;C23C16/04;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L21/00;H01L21/02;H01L21/20;H01L21/205;H01L33/00;H01S5/343 |
主分类号 |
C30B25/02 |
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