| 摘要 |
PURPOSE: A method and apparatus for providing an etch tool process indicator are provided to detect asymmetry by using a blanket etch and a blank deposition. CONSTITUTION: A wafer with a blanket etch layer is provided in an etching chamber(104). A blanket etch layer is blanket-etched(108). A blanket deposition layer is deposited on the blanket etch layer(112). The thicknesses of the blanket etch layer and the blanket deposition layer are measured(116). A process indicator is determined by using the measured thickness(120). |
