| 摘要 |
<p>PURPOSE: A semiconductor memory device is provided to reduce interfacial noises between cells by connecting the channel region of the cells with a bit-line and applying a program voltage based on a channel bias voltage. CONSTITUTION: A channel region(10) is formed on a semiconductor substrate and is in connection with a bit-line. A first insulating layer(13) is formed on the upper side of the channel region. A charge storing layer(14) is formed on the upper side of the first insulating layer. A second insulting layer(15) is formed on the upper side of the charge storing layer. A word-line(16) is formed on the upper side of the insulating layer.</p> |
