发明名称 |
Method for manufacturing photoelectric conversion device |
摘要 |
A photoelectric conversion device which is excellent in photoelectric conversion characteristics is provided by effectively utilizing silicon semiconductor materials. The present invention relates to a method for manufacturing a photoelectric conversion device using a solar cell, in which a plurality of single crystal semiconductor substrates in each of which a damaged layer is formed at a predetermined depth is arranged over a supporting substrate having an insulating surface; a surface layer part of the single crystal semiconductor substrate is separated thinly using the damaged layer as a boundary so as to form a single crystal semiconductor layer over one surface of the supporting substrate; and the single crystal semiconductor layer is irradiated with a laser beam from a surface side which is exposed by separation of the single crystal semiconductor layer to planarize the surface of the single crystal semiconductor layer.
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申请公布号 |
US7964429(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20080260302 |
申请日期 |
2008.10.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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