| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: device consists of evaporation source of sputtering material, and of electron Pierce gun located opposite to evaporation source. A permanent magnet generating magnetic field is installed outside the vacuum chamber on a back side of radiation surface of the electron beam behind the evaporation point of the evaporation source. Magnetic field is in essence perpendicular to the direction of electron beam incidence and practically parallel to surface of radiation of the electron beam of the evaporation source. The permanent magnet deflects and directs the electron beam to the evaporation point of the evaporation source. ^ EFFECT: production of layer applied with vapour sedimentation at high rate of sedimentation due to directing electron beam to evaporation point of evaporated and settled material contained in evaporation source in vacuum chamber; optimisation of radiation range of electron beam in evaporation point. ^ 10 cl, 26 dwg |
