MONOLITHIC MICROWAVE INTEGRATED CIRCUIT DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A monolithic microwave integrated circuit device and a method for forming the same are provided to simplify a process by forming the electrode of HBT(Heterojuction Bipolar Transistor) and a PIN diode. CONSTITUTION: In a monolithic microwave integrated circuit device and a method for forming the same, a sub-collector layer(110) is formed on the HBT domain and PIN diode area of a substrate(100). A collector layer(120) is formed on the Sub-collector layer. A base layer(130) is formed on the collector layer. An emitter layer(140) and an emitter cap layer(150) are formed on the base layer. The emitter pattern and the emitter cap pattern of the HBT region are formed by patterning the emitting layer and the emitter cap layer.