发明名称 Semiconductor Device
摘要 It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.
申请公布号 US2011140120(A1) 申请公布日期 2011.06.16
申请号 US20100978844 申请日期 2010.12.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 HIGAKI YOSHINARI;SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI
分类号 H01L33/08 主分类号 H01L33/08
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