P-TYPE ALGAN LAYER, METHOD FOR PRODUCING SAME AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

Disclosed are: a p-type AlGaN layer that has improved carrier concentration and improved luminous output; a method for producing the p-type AlGaN layer; and a group III nitride semiconductor light-emitting element. Specifically disclosed is a method for producing a p-type AlGaN layer, which is characterized in that a p-type AlxGa1-xN layer (0 = x < 1) is formed by repeating, a plurality of times, a first step in which a group III material gas is supplied at a group III material gas flow rate A1 (0 = A1), a group V material gas is supplied at a group V material gas flow rate B1 (0 1), and a gas that contains magnesium is supplied at an Mg-containing gas flow rate C1 (0 1), and a second step in which the group III material gas is supplied at a group III material gas flow rate A2 (0 2), the group V material gas is supplied at a group V material gas flow rate B2 (0 2), and the gas that contains magnesium is supplied at an Mg-containing gas flow rate C2 (0 2), said group III material gas flow rate A1 being a flow rate at which the p-type AlxGa1-xN layer is not grown, while satisfying A1 = 0.5A2.