| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which reduces current consumption and space for a circuit. <P>SOLUTION: The nonvolatile semiconductor memory includes: a memory cell array which has a plurality of memory cells formed of a series circuit containing memory elements which change states with application of write voltage, and a rectifier element which allows a current which flows from a first wiring to a second wiring through the memory element to flow in a forward direction; a power source voltage which steps up or down the external power source voltage, to generate a first voltage, a second voltage lower than the first voltage, a third voltage lower than the second voltage, a fourth voltage which is lower than the third voltage and uses a potential difference between the first voltage and the fourth voltage as the write voltage; and a driver circuit which applies the first voltage, the second voltage, the third voltage, and the fourth voltage to a first selection wiring, a second non-selection wiring, a first non-selection wiring, and a second selection wiring, respectively when writing data. The second voltage is lower than the external power source voltage. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
