| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor that avoids an increase in channel resistance. <P>SOLUTION: A bottom gate type thin-film transistor has an interlayer insulating film, having an opening in the formation region of a gate electrode, formed on a gate insulating film, wherein a semiconductor film is formed on the interlayer insulating film while covering the opening, the interlayer insulating film contains more nitride than the gate insulating film, and the semiconductor film is composed of a microcrystalline semiconductor film or polycrystalline semiconductor film formed on a semiconductor crystal nuclei formed on gate insulating film and interlayer insulating film surfaces and containing at least Ge. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
