DIAZABOROLE COMPOUND AND FIELD-EFFECT TRANSISTOR CONTAINING SAID COMPOUND

摘要

Provided is an n-type organic field-effect transistor that exhibits high electron mobility and a high current on/off ratio, wherein an organic semiconductor layer can be easily manufactured, by coating or printing, from a diazaborole compound that is useful in an organic semiconductor material and an organic semiconductor material containing said diazaborole compound. Said diazaborole compound is represented by chemical formula (1) (in which Ar1 and Ar2, which may be the same or different, represent aryl groups that may have substituents). The provided n-type organic field-effect transistor has an organic semiconductor layer, which forms a current path between a source electrode and a drain electrode, and a gate electrode, which controls the current in said current path, on top of a substrate and separated by an insulator film. The organic semiconductor layer contains the provided diazaborole compound.