Quantum- well-based semiconductor devices and methods of forming quantum- well-based semiconductor devices are described. A method includes providing a hetero- structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a trench in the source and drain material region to provide a source region separated from a drain region. The method also includes forming a gate dielectric layer in the trench, between the source and drain regions; and forming a gate electrode in the trench, above the gate dielectric layer.
申请公布号
WO2011071598(A2)
申请公布日期
2011.06.16
申请号
WO2010US53218
申请日期
2010.10.19
申请人
INTEL CORPORATION;DEWEY, GILBERT;CHAU, ROBERT S.;RADOSAVLJEVIC, MARKO;METZ, MATTHEW V.;PILLARISETTY, RAVI
发明人
DEWEY, GILBERT;CHAU, ROBERT S.;RADOSAVLJEVIC, MARKO;METZ, MATTHEW V.;PILLARISETTY, RAVI