MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND PROCESS FOR PRODUCING SAME

摘要

Provided are a multilayer mirror for EUV lithography in which a reduction in reflectivity due to the oxidation of the Ru protective layer can be inhibited, and a process for producing same. The disclosed multilayer mirror for EUV lithography has a reflective layer for reflecting EUV radiation and a protective layer for protecting the reflective layer which are formed on a substrate in the aforementioned order, and is characterized in that: the reflective layer is a Mo/Si multilayer reflective film; the protective layer is a Ru layer or a Ru compound layer; and an intermediate layer containing 0.5 to 25 at.% of nitrogen and 75 to 99.5 at.% of Si is formed between the reflective layer and the protective layer.