| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state pickup element of high potential holding function which has a thin-film transistor having a stable electric characteristic. <P>SOLUTION: An oxide semiconductor layer is used to allow an off current of a thin-film transistor to be 1×10<SP>-13</SP>A or less. The thin-film transistor is used for both of a reset transistor and a transfer transistor of the solid-state pickup element to keep the potential of a signal charge accumulation part constant, resulting in an improved dynamic range. For a peripheral circuit, a silicon semiconductor capable of making a complementary metal oxide semiconductor element is used to produce a semiconductor device of high speed and low power consumption. <P>COPYRIGHT: (C)2011,JPO&INPIT |
