| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with an improved heat radiation property, and a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate 10 having a first surface with a first side; an electrode 14 arranged on the semiconductor substrate; a first insulating layer 16 having a first opening part 24 positioned on the electrode; a resin layer 20 arranged on the first insulating layer avoiding at least a part of the electrode; a conductive layer having a first part 31 arranged on the resin layer, a second part 32 electrically connecting the first part to the electrode, and a third part 33 electrically connecting the first part to the second part; and a second insulating layer 40 arranged to cover the second part of the conductive layer, having a second opening part 41 positioned above at least a part of the first part of the conductive layer, and avoiding the third part of the conductive layer. The third part of the conductive layer is positioned between the first side of the first surface and the second insulating layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
