| 摘要 |
A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0≰x≰2, 0≰y≰2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0≰x, 0≰y, x+y≰1) over the first buffer layer.
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