| 摘要 |
Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound. |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION;AFZALI-ARDAKANI, ALI;BAUM, THOMAS H.;BOGGS, KARL E.;COOPER, EMANUEL I.;CYWAR, DOUGLAS;KERN, MATTHEW;KHOJASTEH, MAHMOUD;NUNES, RONALD W.;TOTIR, GEORGE GABRIEL |
发明人 |
AFZALI-ARDAKANI, ALI;BAUM, THOMAS H.;BOGGS, KARL E.;COOPER, EMANUEL I.;CYWAR, DOUGLAS;KERN, MATTHEW;KHOJASTEH, MAHMOUD;TOTIR, GEORGE GABRIEL |
