| 摘要 |
<p>PURPOSE: A method for forming the gate spacer of a semiconductor device is provided to suppress the occurrence of a charge gain phenomenon by preventing a spacer from being formed in a spacer sub-layer. CONSTITUTION: A lightly doped drain(LDD) region(200) is formed on a semiconductor substrate(110) on which a gate poly is formed. An oxide film(120) and a high temperature oxidation(HTO) film(130) are deposited and etched. An SiN film(140) is deposited and etched to form a first gate. The HTO film is etched to form a first gate. An SiN film is re-deposited and re-etched to form a second gate, and a second gate spacer is formed.</p> |
